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JWJ > Volume 37(4); 2019 > Article
Journal of Welding and Joining 2019 August;37(4) :363-368.
Published online August 28, 2019.
doi:https://doi.org/10.5781/JWJ.2019.37.4.11
Optimum Process Condition and Shear Strength of Transient Liquid Phase Bonded Cu/Sn/Ag and Ni/Sn/Ag Structures for Power Semiconductor Interconnect
Sunghyun Sohn1  , Jeonga Kim2, Yujin Park3, Kyung Mox Cho1  , Namhyun Kang1 
1Department of Materials Science & Engineering, Pusan National University, Busan, 46241, Korea
2Substrate Solution, Samsung Electro-Mechanics, Busan, 46754, Korea
3Department of Materials Science & Engineering, University of California at San Diego, CA 92093, USA
Correspondence: Kyung Mox Cho  Email: chokm@pusan.ac.kr, nhkang@pusan.ac.kr
Namhyun Kang  Email: chokm@pusan.ac.kr, nhkang@pusan.ac.kr
Received June 6, 2019  Revised July 5, 2019  Accepted July 11, 2019  Published online August 28, 2019
ABSTRACT
Transient Liquid Phase Bonding (TLPB) is one of the promising processes for interconnecting power semiconductors, which are usually used at high temperature. However, the TLPB process parameters needed to ensure robust interconnection have not been systematically studied. In this study, TLPB was conducted with various bonding temperatures and times. Sandwich structures made of Cu/Sn/Cu, Ag/Sn/Ag, and Ni/Sn/Ni were processed at 250 and 280 ℃ for 1, 2, and 3 h, respectively. The microstructure of the interconnections was analyzed with scanning emission microscopy equipped with energy dispersive spectroscopy. Then dissimilar metalized Cu/Sn/Ag and Ni/Sn/Ag sandwich structures processed at 280 ℃ for 1, 2, and 3 h. The fracture surface of Cu/Sn/Ag consisted of Ag3Sn with shear bands, and the shear strength was 30 MPa on average. The fracture surface of Ni/Sn/Ag consisted of Ni3Sn4 and Ag3Sn with shear bands, and the shear strength was 31 MPa on average. The minimum bonding time for reliable interconnection was 1 and 2 h for Cu/Sn/Ag and Ni/Sn/Ag, respectively.
Keywords: Transient liquid phase bonding | Metailization | Interconnect | Power semiconductor | Intermetallic compounds | Lap-shear test
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