Fracture Mode Analysis with ISB Bonding Process Parameter for 3D Packaging

, Young-Kang Lee; , Jae-Hak Lee; , Jun-Yeob Song; , Hyoung-Joon Kim

doi:2013.31.6.77

J Weld Join > Volume 31(6); 2013 > Article

Research Paper

Journal of KWJS 2013;31(6):77-83.
DOI: https://doi.org/10.5781/KWJS.2013.31.6.77 Published online January 21, 2014.

Fracture Mode Analysis with ISB Bonding Process Parameter for 3D Packaging

Young-Kang Lee ^*, Jae-Hak Lee ^**, Jun-Yeob Song ^**, Hyoung-Joon Kim ^**

Correspondence: Jae-Hak Lee ,
Email: jaehak76@kimm.re.kr

Abstract

3D packaging technology using TSV (Through Silicon Via)has been studied in the recent years to achieve higher performance, lower power consumption and smaller package size because electrical line is shorter electrical resistivity than any other packaging technology. To stack TSV chips vertically, reliable and robust bonding technology is required because mechanical stress and thermal stress cause fracture during the bonding process. Cu pillar/solder μ-bump bonding process is usually to interconnect TSV chips vertically although it has weak shape to mechanical stress and thermal stress. In this study, we suggest Insert-Bump (ISB) bonding process newly to stack TSV chips. Through experiments, we tried to find optimal bonding conditions such as bonding temperature and bonding pressure. After ISB bonding, we observed microstructure of bump joint by SEM and then evaluated properties of bump joint by die shear test.

Key Words: 3D packaging, Bonding technology, Through silicon via, Insert-bump bonding, Die shear test, Shear strength, Fracture mode