Development of SiC Composite Solder with Low CTE as Filling Material for Molten
Metal TSV Filling

Ko, Young-Ki; Ko, Yong-Ho; Bang, Jung-Hwan; Lee, Chang-Woo

doi:2014.32.3.282

J Weld Join > Volume 32(3); 2014 > Article

Research Paper

Journal of Welding and Joining 2014;32(3):282-287.
DOI: https://doi.org/10.5781/JWJ.2014.32.3.68 Published online June 30, 2014.

Development of SiC Composite Solder with Low CTE as Filling Material for Molten Metal TSV Filling

Young-Ki Ko^*,**, Yong-Ho Ko^*,***, Jung-Hwan Bang^*, Chang-Woo Lee^*,†

Correspondence: Chang-Woo Lee,
Email: cwlee@kitech.re.kr

Abstract

Among through silicon via (TSV) technologies, for replacing Cu filling method, the method of molten solder filling has been proposed to reduce filling cost and filling time. However, because Sn alloy which has a high coefficient of thermal expansion (CTE) than Cu, CTE mismatch between Si and molten solder induced higher thermal stress than Cu filling method. This thermal stress can deteriorate reliability of TSV by forming defects like void, crack and so on. Therefore, we fabricated SiC composite filling material which had a low CTE for reducing thermal stress in TSV. To add SiC nano particles to molten solder, ball-typed SiC clusters, which were formed with Sn powders and SiC nano particles by ball mill process, put into molten Sn and then, nano particle-dispersed SiC composite filling material was produced. In the case of 1 wt.% of SiC particle, the CTE showed a lowest value which was a 14.8ppm/℃and this value was lower than CTE of Cu. Up to 1 wt.% of SiC particle, Young’s modulus increased as wt.% of SiC particle increased. And also, we observed cross-sectioned TSV which was filled with 1 wt.% of SiC particle and we confirmed a possibility of SiC composite material as a TSV filling material.

Key Words: Through Silicon Via(TSV), Coefficient of Thermal expansion(CTE) mismatch, SiC composite solder