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J Weld Join. 2014;32(3):233-240. Published online June 30, 2014.
DOI: https://doi.org/10.5781/JWJ.2014.32.3.19
- Technical Trend of TSV(Through Silicon Via) Filling for 3D Wafer Electric Packaging
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Young-Ki Ko*,**, Yong-Ho Ko*,***, Jung-Hwan Bang*, Chang-Woo Lee*,†
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- Corresponding author: Chang-Woo Lee ,Email: cwlee@kitech.re.kr
- Abstract
- Through Silicon Via (TSV) technology is the shortest interconnection technology which is compared with
conventional wire bonding interconnection technology. Recently, this technology has been also noticed for
the miniaturization of electronic devices, multi-functional and high performance. The short interconnection
length of TSV achieve can implement a high density and power efficiency. Among the TSV technology,
TSV filling process is important technology because the cost of TSV technology is depended on the filling
process time and reliability. Various filling methods have been developed like as Cu electroplating method,
molten solder insert method and Ti/W deposition method. In this paper, various TSV filling methods were
introduced and each filling materials were discussed.
Keywords :3D packaging, TSV, Via filling technology
